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---

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i

an

AMP

comDanv

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RF MOSFET Power Transistor, 2OW, 28V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device

DMOS Structure

Lower Capacitances for Broadband Operation

High Saturated Output Power

Lower Noise Figure Than Bipolar Devices

DU2820S

Absolute Maximum Ratings at 25擄C

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain-Source Current

Power Dissipation

JunctionTemperature

Storage Temperature

Thermal Resistance

1

Symbol

V 0s

V GS

4,s

p rJ

TJ

T STG

6JC

1

Rating

65

20

24

62.5

200

-55 to +150

2.8

t

Units

V

V

A

W

鈥淐

鈥淐

鈥淐l-W

1

J

1

4.04

1

4.55

7.39

[

I

X59

.259

1

I

.l79

291

I

1

K

L

1 6.58

1

.I0

1

1

x5

1

404

1

Jo6

Electrical Characteristics

I

Parameter

Drain-Source

Drain-Source

Gate-Source

Breakdown Voltaae

Leakage Current

Leakage Current

at 25擄C

Symbol

BV..,,

鈥榓ss

鈥楪SS

V 0sr-v

GM

C 15s

C OS5

C

RSS

GP

鈥?0

VSWR-T

13

60

-

2.0

500

Min

65

Max

-

1.0

1.0

6.0

-

45

40

a

-

-

3O:l

Units

V

mA

fl

V

mS

pF

pF

PF

dB

%

-

V,.=O.O V, I,,=50

v,,=28.0

v, v,,=o.o

mA

v

v

Test Conditions

vGs=20.0 v. v,,=o.o

Gate Threshold Voltage

ForwardTransconductance

Input Capacitance

Output Capacitance

Reverse Capacitance

Power Gain

Drain Efficiency

Load MismatchTolerance

Specifications

VDs=l 0.0 V, IDS=1

00.0 mA

V&O.0

v,,=28.0

V,,=28.0

V,,=28.0

V, 1,,=100.0 mA, AV,,=l

v, F=l .o MHZ

V, F=l .O MHz

V, F=l .O MHz

mA, P,,f20

W, F=175 MHz

MHz

MHz

.O V, 80 ps Pulse

vD,=2a.o V, I,,=100

v,,=28.0

v,,=28.0

v, I,,=100

mA, PO,=20 W, F=l75

V. I,,=1 00 mA, P,,1=;20 W, F=l75

Subject to Change Without Notice.

M/A-COM, Inc.

North

America:

Tel.

Fax

(800)

(800)

366-2266

618-8883

m

Asia/Pacific:

Tel.

Fax

t81

+81

(03)

(03)

3226-1671

3226-1451

n

Europe:

Tel.

Fax

+44 (1344)

+44 (1344)

869 595

300 020

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