DTC343TK / DTC343TS
Transistors
Digital transistors (built-in resistor)
DTC343TK / DTC343TS
Features
In addition to the features of regular digital transistors,
1) Low V
CE(sat)
makes these transistors ideal for muting
circuits. (Typ. 0.04V at I
C
/I
B
=50/2.5mA)
2) They can be used at high current. (I
CMax
. =600mA)
Circuit schematic
C
R
1
B
E
E : Emitter
C : Collector
B : Base
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
DTC343TK
DTC343TS
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
30
15
5
600
200
300
150
鈭?5
to
+150
Unit
V
V
V
mA
mW
C
C
Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTC343TK
SMT3
H03
T146
3000
DTC343TS
SPT
鈭?/div>
TP
5000
External characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
Symbol
Min.
30
15
5
鈭?/div>
鈭?/div>
鈭?/div>
100
3.29
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
40
250
4.7
200
0.95
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.5
0.5
80
600
6.11
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A
碌A
mV
鈭?/div>
k鈩?/div>
MHz
鈩?/div>
I
C
=50碌A
I
C
=1mA
I
E
=50碌A
V
CB
=20V
V
EB
=4V
I
C
=50mA
, I
B
=2.5mA
I
C
=50mA
, V
CE
=5V
鈭?/div>
V
CE
=10V
, I
E
= 鈭?0mA
, f=100MHz
鈭?/div>
V
I
=7V
, R=1k鈩?, f=1kHz
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Ron
Transition frequency
Output on resistance
鈭?/div>
Transition frequency of the device.
Rev.A
1/2
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