DTC125TUA / DTC125TKA / DTC125TSA
Transistors
Digital transistor (built-in resistor)
DTC125TUA / DTC125TKA / DTC125TSA
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
!External
dimensions
(Units : mm)
0.65 0.65
0.7
DTC125TUA
0.3
(3)
(1)
1.25
2.1
0.15
0.2
(2)
0.1to0.4
0to0.1
Each lead has same dimensions
0.9
1.3
2.0
ROHM : UMT3
EIAJ : SC-70
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
(1)
DTC125TKA
!Absolute
maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power DTC125TUA / DTC125TKA
dissipation
DTC125TSA
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
50
50
5
100
200
300
150
鈭?5 鈭?+150
Unit
V
V
V
mA
mW
擄C
擄C
0.4
(3)
1.6
2.8
0.15
0.3to0.6
0to0.1
Each lead has same dimensions
0.8
1.1
0.95 0.95
1.9
2.9
(2)
ROHM : SMT3
EIAJ : SC-59
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
DTC125TSA
4
3
2
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTC125TUA
UMT3
0A
T106
3000
DTC125TKA
SMT3
0A
T146
3000
DTC125TSA
SPT
鈭?/div>
TP
5000
(15Min.)
!Package,
marking, and packaging specifications
3Min.
0.45
2.5
5
(1) (2) (3)
0.5 0.45
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
!Electrical
characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Min.
50
50
5
鈭?/div>
鈭?/div>
鈭?/div>
100
140
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
250
200
250
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.5
0.5
0.3
600
260
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
鈭?/div>
k鈩?/div>
MHz
I
C
=
50碌A(chǔ)
I
C
=
1mA
I
E
=
50碌A(chǔ)
V
CB
=
50V
V
EB
=
4V
I
C
=
0.5mA , I
B
=
0.05mA
I
C
=
1mA , V
CE
=
5V
鈭?/div>
V
CE
=
10V , I
E
=
-5mA , f
=
100MHz
Conditions
!Circuit
schematic
B
R
1
C
E
E : Emitter
C : Collector
B : Base
Transition frequency
鈭?/div>
Transition frequency of the device.
鈭?/div>
DTC125TSA相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Peripheral IC
-
英文版
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220AB
-
英文版
Digital transistors(built-in resistors)
LRC
-
英文版
Digital transistors(built-in resistors)
LRC [Lesha...
-
英文版
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220AB
-
英文版
10A Bidirectional Thyristor
SANYO
-
英文版
10A Bidirectional Thyristor
SANYO [San...
-
英文版
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92
-
英文版
DIGITAL TRANSISTOR
ROHM
-
英文版
DIGITAL TRANSISTOR
ROHM [Rohm...
-
英文版
NPN SILICON BIAS RESISTOR TRANSISTOR
ONSEMI
-
英文版
DIGITAL TRANSISTOR
ROHM
-
英文版
NPN SILICON BIAS RESISTOR TRANSISTOR
ONSEMI [ON...
-
英文版
DTA/DTC SERIES
ROHM [Rohm...
-
英文版
DIGITAL TRANSISTOR
ROHM [Rohm...
-
英文版
DIGITAL TRANSISTOR
ROHM
-
英文版
DIGITAL TRANSISTOR
ROHM [Rohm...
-
英文版
NPN SILICON BIAS RESISTOR TRANSISTOR
ONSEMI
-
英文版
DIGITAL TRANSISTOR
ROHM
-
英文版
NPN SILICON BIAS RESISTOR TRANSISTOR
ONSEMI [ON...
1
