DTC115GUA / DTC115GKA / DTC115GSA
Transistors
Digital transistors (built-in resistor)
DTC115GUA / DTC115GKA / DTC115GSA
Features
1) The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
2) Only the on / off conditions need to be set for operation,
making device design easy.
3) Higher mounting densities can be achieved.
External dimensions
(Unit : mm)
0.65 0.65
0.7
0.8
0
~
0.1
DTC115GUA
0.3
(3)
(1)
1.25
2.1
0.15
0.2
(2)
0.1Min.
0~0.1
Each lead has same dimensions
Equivalent circuit
B
R
ROHM : UMT3
EIAJ : SC-70
C
(1) Emitter
(2) Base
(3) Collector
(1)
DTC115GKA
0.4
E : Emitter
C : Collector
B : Base
0.15
(3)
1.6
2.8
(2)
E
0.3Min.
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltag
Emitter-base voltage
Collector current
Collector power
dissipation
DTA115GUA / DTA115GKA
DTA115GSA
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
50
50
5
100
200
300
150
鈭?5
to
+150
Unit
V
V
V
mA
mW
mW
擄C
擄C
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
2
DTC115GSA
3
4
Junction temperature
Storage temperature
(15Min.)
3Min.
0.45
Package, marking, and packaging specifications
Type
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTC115GUA
UMT3
K29
T106
3000
DTC115GKA
SMT3
K29
T146
3000
DTC115GSA
SPT
鈭?/div>
TP
5000
2.5
5
(1) (2) (3)
0.5 0.45
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltag
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Emitter-base resistance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
f
T
Min.
50
50
5
鈭?/div>
30
鈭?/div>
82
70
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
100
250
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.5
58
0.3
鈭?/div>
130
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
鈭?/div>
k鈩?/div>
MHz
I
C
=50碌A(chǔ)
I
C
=1mA
I
E
=72碌A(chǔ)
V
CB
=50V
V
EB
=4V
I
C
=5mA,
I
B
=0.25mA
I
C
=5mA,
V
CE
=5V
鈭?/div>
V
CE
=10V,
I
E
=鈭?mA,
f=100MHz
Conditions
Transition frequency
鈭?/div>
Transition
frequency of the device.
鈭?/div>
Rev.A
1.1
0.95 0.95
1.9
2.9
0.9
1.3
2.0
1/2
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