DS 35
DSA 35
DSI 35
DSAI 35
Rectifier Diode
Avalanche Diode
V
RRM
= 800-1800 V
I
F(RMS)
= 80 A
I
F(AV)M
= 49 A
V
RSM
V
900
1300
1300
1700
1900
V
(BR)min
每
x
V
RRM
V
-
-
1300
1750
1950
V
800
1200
1200
1600
1800
Anode
on stud
DS 35-08A
DS 35-12A
DSA 35-12A
DSA 35-16A
DSA 35-18A
Cathode
on stud
DSI 35-08A
DSI 35-12A
DSAI 35-12A
DSAI 35-16A
DSAI 35-18A
DO-203 AB
C
A
DS
DSA
A
C
DSI
DSAI
x
Only for Avalanche Diodes
A = Anode
C = Cathode
1/4-28UNF
Symbol
I
F(RMS)
I
F(AVM)
P
RSM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
case
= 100擄C; 180擄 sine
DSA(I) types, T
VJ
= T
VJM
, t
p
= 10
ms
T
VJ
= 45擄C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
80
49
11
650
690
600
640
2100
2000
1800
1700
-40...+180
180
-40...+180
A
A
kW
A
A
A
A
As
A
2
s
A
2
s
A
2
s
擄C
擄C
擄C
Nm
lb.in.
g
2
Features
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
q
q
It
2
T
VJ
= 45擄C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Applications
High power rectifiers
Field supply for DC motors
Power supplies
q
q
q
T
VJ
T
VJM
T
stg
M
d
Weight
Mounting torque
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
q
q
q
q
4.5-5.5
40-49
15
Dimensions in mm (1 mm = 0.0394")
Symbol
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 150 A; T
VJ
= 25擄C
Characteristic Values
攏
攏
4
1.55
0.85
4.5
1.05
1.25
4.05
3.9
100
mA
V
V
mW
K/W
K/W
mm
mm
m/s
2
For power-loss calculations only
T
VJ
= T
VJM
DC current
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
漏 2000 IXYS All rights reserved
1-2
1
2
