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DS1249W

3.3V 2048kb Nonvolatile SRAM

www.maxim-ic.com

FEATURES

摟

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10 years minimum data retention in the

absence of external power

Data is automatically protected during power

loss

Unlimited write cycles

Low-power CMOS operation

Read and write access times as fast as 100ns

Lithium energy source is electrically

disconnected to retain freshness until power is

applied for the first time

Optional industrial (IND) temperature range

of -40擄C to +85擄C

JEDEC standard 32-pin DIP package

PIN ASSIGNMENT

NC

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

GND

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

V

CC

A15

A17

WE

A13

A8

A9

A11

OE

A10

CE

DQ7

DQ6

DQ5

DQ4

DQ3

32-Pin Encapsulated Package

740mil Extended

PIN DESCRIPTION

A0鈥揂17

DQ0鈥揇Q7

CE

WE

OE

V

CC

GND

NC

- Address Inputs

- Data In/Data Out

- Chip Enable

- Write Enable

- Output Enable

- Power (+3.3V)

- Ground

- No Connect

DESCRIPTION

The DS1249W 2048kb nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, NV SRAMs organized as

262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry

that constantly monitors V

CC

for an out-of-tolerance condition. When such a condition occurs, the lithium

energy source is automatically switched on and write protection is unconditionally enabled to prevent

data corruption. There is no limit on the number of write cycles that can be executed, and no additional

support circuitry is required for microprocessor interfacing.

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