6.0鈩?/div>
I
DSS
(min)
300mA
Order Number / Package
TO-92
DN2640N3
Die
DN2640ND
DN2640
Preliminary
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Advanced DMOS Technology
These depletion-mode (normally-on) transistors utilize an ad-
vanced vertical DMOS structure and Supertex鈥檚 well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex鈥檚 vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
8
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSX
BV
DGX
鹵
20V
-55擄C to +150擄C
300擄C
SGD
TO-92
Note:
See Package Outline section for dimensions.
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