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Very low gate threshold voltage
Design to be source-driven
Low switching losses
Low effective output capacitance
Design for inductive load
Well matched for low second harmonic
General Description
The Supertex DN2625 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex鈥檚 well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coef鏗乧ient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex鈥檚 vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
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Medical ultrasound beamforming
Ultrasonic array focusing transmitter
Piezoelectric transducer waveform drivers
High speed arbitrary waveform generator
Normally-on switches
Solid state relays
Constant current sources
Power supply circuits
Switching Waveforms and Test Circuit
V
DD
0V
90%
INPUT
-10V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
L
OUTPUT
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
Thermal Characteristics
Package
D-PAK
14-Lead QFN
I
D
(continuous)
1
(A)
I
D
(pulsed)
(A)
R
螛jA
2
(
O
C/W)
R
螛jC
(
O
C/W)
I
DR1
(A)
I
DRM
(A)
1.1
3.3
50
45
5.5
4.0
1.1
3.3
Notes:
1. I
D
(Continuous) is limited by Max. T
J
2. 4-layer, 1oz, 3x4inch PCB, with 20-via for drain pad.
DN2625K6-G 產(chǎn)品屬性
Supertex
MOSFET
N-Channel
250 V
+/- 20 V
1.1 A
3.5 Ohms
Dual
+ 150 C
SMD/SMT
QFN-14
Tray
20 ns
7.04 nC
- 55 C
20 ns
490
10 ns
DN2625K6-G相關(guān)型號(hào)PDF文件下載
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