DMN5L06-7 Datasheet

IC型號(hào)：
DMN5L06-7
PDF描述：
SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
文件大?。?/label>
128.04KB
PDF頁(yè)數(shù)：
4頁(yè)
芯片廠家：
DIODES

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DMN5L06

Lead-free Green

SINGLE N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

NEW PRODUCT

Features

路

Single N-Channel MOSFET

Low On-Resistance

Very

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 2)

鈥淕reen鈥?Device (Note 3)

TOP VIEW

SOT-23

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0擄

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8擄

Mechanical Data

路

Case: SOT-23

Case Material: Molded Plastic, "Green" Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals Connections: See Diagram

Terminals: Finish

戮

Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Marking: Date Code and Type Code, See Page 2

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approximate)

Gate

Drain

All Dimensions in mm

Source

Maximum Ratings

Drain-Source Voltage

@ T

= 25擄C unless otherwise specified

Symbol

DSS

DGR

Continuous

Pulsed

Continuous

Pulsed

GSS

qJA

, T

STG

Value

鹵20

鹵40

280

1.5

350

357

-55 to +150

Units

擄C/W

擄C

Characteristic

Drain-Gate Voltage R

攏

1.0MW

Gate-Source Voltage

Drain Current (Note 1)

Total Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc鈥檚鈥淕reen鈥?policy can be found on our website at http://www.diodes.com/products/lead_free/index.php

DS30614 Rev. 3 - 2

1 of 4

www.diodes.com

DMN5L06

茫

Diodes Incorporated

標(biāo)準(zhǔn)包裝
3,000
類(lèi)別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門(mén)
漏極至源極電壓(Vdss)
50V
電流 - 連續(xù)漏極(Id) @ 25° C
280mA
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
3 歐姆 @ 200mA，2.7V
Id 時(shí)的 Vgs(th)（最大）
1.2V @ 250µA
閘電荷(Qg) @ Vgs
-
輸入電容 (Ciss) @ Vds
50pF @ 25V
功率 - 最大
350mW
安裝類(lèi)型
表面貼裝
封裝/外殼
TO-236-3，SC-59，SOT-23-3
供應(yīng)商設(shè)備封裝
SOT-23-3
包裝
帶卷 (TR)
其它名稱(chēng)
DMN5L06DITR

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