鈥?/div>
Case: SC-59
Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
J
Drain
K
M
H
J
K
L
Gate
M
Gate
Protection
Diode
偽
Source
鈥?/div>
EQUIVALENT CIRCUIT
ESD Protected
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@T
A
= 25擄C unless otherwise specified
Symbol
V
DSS
V
GSS
I
D
P
d
R
胃
JA
T
j
, T
STG
Value
20
鹵8
1.2
4.0
500
250
-55 to +150
Units
V
V
A
mW
擄C
/W
擄C
Characteristic
Continuous
Continuous
Pulsed
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes:
@T
A
= 25擄C unless otherwise specified
Symbol
BV
DSS
@ T
j
= 25擄C
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
IY
fs
I
V
SD
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
t
r
t
f
Min
20
鈳?/div>
鈳?/div>
0.5
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
4.2
0.8
220
120
45
10
75
15
65
Max
鈳?/div>
10
鹵
10
1.2
0.10
0.14
0.25
鈳?/div>
1.1
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Unit
V
碌A(chǔ)
碌A(chǔ)
V
惟
S
V
pF
pF
pF
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250碌A(chǔ)
V
DS
= 20V, V
GS
= 0V
V
GS
=
鹵
8V, V
DS
= 0V
V
DS
= 10V, I
D
= 1.0mA
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 2.5V, I
D
= 0.5A
V
GS
= 1.5V, I
D
= 0.1A
V
DS
= 10V, I
D
=0.5A
V
GS
= 0V, I
S
= 1A
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
V
DD
= 5V, I
D
= 0.5A,
V
GS
= 10V, R
GEN
= 50惟
1. Pulse width
鈮?/div>
300渭s, duty cycle
鈮?/div>
2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30830 Rev. 3 - 2
1 of 3
www.diodes.com
DMN2112SN
漏 Diodes Incorporated
DMN2112SN-7 產(chǎn)品屬性
3,000
分離式半導體產(chǎn)品
FET - 單
-
MOSFET N 通道，金屬氧化物
邏輯電平門
20V
1.2A
100 毫歐 @ 500mA，4.5V
1.2V @ 1mA
-
220pF @ 10V
500mW
表面貼裝
TO-236-3，SC-59，SOT-23-3
SC-59-3
帶卷 (TR)
DMN2112SNDITR
DMN2112SN-7相關(guān)型號PDF文件下載
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