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DMN2004K-7 Datasheet

  • DMN2004K-7

  • N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

  • 143.54KB

  • 4頁(yè)

  • DIODES

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上傳產(chǎn)品規(guī)格書

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SPICE MODEL: DMN2004K
Lead-free Green
DMN2004K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
ADVANCED INFORMATION
NEW PRODUCT
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2KV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
J
E
G
TOP VIEW
S
D
G
H
K
L
B
C
D
A
SOT-23
Dim
A
B
C
D
E
M
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0擄
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8擄
G
H
J
K
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, 鈥淕reen鈥?Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.008 grams (approximate)
Gate
Protection
Diode
Source
Gate
Drain
L
M
a
All Dimensions in mm
ESD protected up to 2KV
EQUIVALENT CIRCUIT
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
@ T
A
= 25擄C unless otherwise specified
Characteristic
Symbol
V
DSS
V
GSS
Steady
State
T
A
= 25擄C
T
A
= 85擄C
I
D
I
DM
P
d
R
qJA
T
j
, T
STG
Value
20
鹵8
540
390
1.5
350
357
-65 to +150
Units
V
V
mA
A
mW
擄C/W
擄C
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note:
1.
2.
3.
4.
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width
攏10mS,
Duty Cycle
攏1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30938 Rev. 2 - 2
1 of 4
www.diodes.com
DMN2004K
Diodes Incorporated

DMN2004K-7 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道,金屬氧化物

  • 邏輯電平門

  • 20V

  • 630mA

  • 550 毫歐 @ 540mA,4.5V

  • 1V @ 250µA

  • -

  • 150pF @ 16V

  • 350mW

  • 表面貼裝

  • TO-236-3,SC-59,SOT-23-3

  • SOT-23-3

  • 帶卷 (TR)

  • DMN2004KDITR

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