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DMMT5551-7 Datasheet

  • DMMT5551-7

  • MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

  • 74.40KB

  • 3頁

  • DIODES

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SPICE MODEL: DMMT5551
DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Features
NEW PRODUCT
Epitaxial Planar Die Construction
Complementary PNP Type Available (DMMT5401)
Ideal for Medium Power Amplification and Switching
Intrinsically Matched NPN Pair (Note 1)
2% Matched Tolerance, h
FE
, V
CE(SAT)
, V
BE(SAT)
1% Matched Tolerance, Available (Note 2)
Available in Lead Free/RoHS Compliant Version (Note 5)
K
A
SOT-26
B C
Dim
A
B
Min
0.35
1.50
2.70
2.90
1.00
0.35
0.10
0擄
Max
0.50
1.70
3.00
3.10
1.30
0.55
0.20
8擄
Typ
0.38
1.60
2.80
0.95
0.55
3.00
0.05
1.10
0.40
0.15
H
M
C
D
F
H
J
K
L
M
Mechanical Data
Case: SOT-26
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Copper leadframe). Please see Ordering
Information, Note 9, on Page 2
Marking (See Page 2): K4R & K4T
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
J
D
F
L
0.013 0.10
E
1
E
2
C
2
C
1
E
1
C
2
a
All Dimensions in mm
C
1
B
1
B
2
B
1
E
2
B
2
DMMT5551
(K4R Marking Code)
DMMT5551S
(K4T Marking Code)
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
Value
180
160
6.0
200
300
417
-55 to +150
Unit
V
V
V
mA
mW
K/W
擄C
Characteristic
Collector Current - Continuous (Note 3)
Power Dissipation (Note 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage and Temperature Range
Notes:
1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Maximum combined dissipation.
5. No purposefully added lead.
DS30436 Rev. 4 - 2
1 of 3
www.diodes.com
DMMT5551/DMMT5551S
Diodes Incorporated

DMMT5551-7 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 陣列

  • -

  • 2 NPN(雙)

  • 200mA

  • 160V

  • 200mV @ 5mA,50mA

  • -

  • 80 @ 10mA,5V

  • 300mW

  • 300MHz

  • 表面貼裝

  • SOT-23-6

  • SOT-26

  • 帶卷 (TR)

  • DMMT5551DITR

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