DIM200PLM33-A000
DIM200PLM33-A000
IGBT Chopper Module
Preliminary Information
Replaces issue April 2003, version DS5597-1.1
DS5597-2.0 May 2003
FEATURES
I
I
I
I
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
(typ)
(max)
(max)
3300V
3.2V
200A
400A
10碌s Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
Choppers
Traction Auxiliaries
1(A/C2)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200PLM33-A000 is a 3300V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10碌s short circuit withstand. This device
is optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
2(K)
8(C
2)
3(E2)
7(E
2)
6(G
2)
Fig. 1 Chopper circuit diagram - lower arm control
ORDERING INFORMATION
Order As:
DIM200PLM33-A000
Note: When ordering, please use the whole part number.
Outline type code:
P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/6
www.dynexsemi.com
1
2
3
4
5
6
