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DE275X2-501N16A Datasheet

  • DE275X2-501N16A

  • RF Power MOSFET

  • 81.59KB

  • 3頁(yè)

  • IXYS   IXYS

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Directed Energy, Inc.
An
鈾?/div>
鈾?/div>
鈾?/div>
鈾?/div>
鈾?/div>
DE275X2-501N16A
RF Power MOSFET
Preliminary Data Sheet
IXYS
Company
Common Source Push-Pull Pair
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
V
DSS
I
D25
R
DS(on)
P
DHS
=
=
=
=
500 V
16 A
0.5
鈩?/div>
750 W
The DE275X2-501N16A is a matched pair of RF power MOSFET devices in
a common source configuration. The device is optimized for push-pull or
parallel operation in RF generators and amplifiers at frequencies to >65
MHz.
Unless noted, specifications are for each output device
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DHS
(1)
P
DAMB
(1)
R
thJHS
(1)
T
J
T
JM
T
stg
T
L
Weight
Symbol
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
c
= 25擄C
T
c
= 25擄C, pulse width limited by T
JM
T
c
= 25擄C
T
c
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
飥?/div>
100A/碌s, V
DD
鈮?/div>
V
DSS
,
T
j
鈮?/div>
150擄C, R
G
= 0.2鈩?/div>
I
S
= 0
T
c
= 25擄C, Derate 6.0W/擄C above 25擄C
T
c
= 25擄C
Maximum Ratings
500
500
鹵20
鹵30
16
96
16
20
5
>200
750
5.0
0.17
-55鈥?150
150
-55鈥?150
V
V
V
V
A
A
A
mJ
V/ns
V/ns
W
W
K/W
擄C
擄C
擄C
擄C
g
SG1
SD1
SD2
SG2
GATE 1
GATE 2
DRAIN 1
DRAIN 2
Features
鈥?/div>
Isolated Substrate
鈭?/div>
high isolation voltage (>2500V)
鈭?/div>
excellent thermal transfer
鈭?/div>
Increased temperature and power
鈥?/div>
鈥?/div>
鈭?/div>
鈭?/div>
鈥?/div>
鈥?/div>
鈥?/div>
cycling capability
IXYS advanced low Q
g
process
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Low gate charge and capacitances
1.6mm (0.063 in) from case for 10 s
300
4
Test Conditions
Characteristic Values
T
J
= 25擄C unless otherwise specified
Advantages
鈥?/div>
High Performance Push-Pull RF
V
鈥?/div>
min.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 3 ma
V
DS
= V
GS
, I
D
= 4 ma
V
GS
= 鹵20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
T
J
= 25擄C
T
J
= 125擄C
V
GS
= 0
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
鈮?/div>
300碌S, duty cycle d
鈮?/div>
2%
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
typ.
max.
500
2.5
5.5
鹵100
V
nA
鈥?/div>
鈥?/div>
High power density
Package
Optimized for RF and high speed
switching at frequencies to >65MHz
Easy to mount鈥攏o insulators needed
50
碌A(chǔ)
1 mA
0.5
2
6
鈩?/div>
S
Note: All specifications are per each tran-
sistor, unless otherwise noted.
(1)
Thermal specifications are for the
package, not per transistor

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