錚?/div>
Program during Erase
2 mA Typical I
CC
in Static Mode
2 碌A(chǔ) Typical Deep Power-Down
State-of-the-Art 0.6 碌m ETOX鈩?IV Flash
Technology
User-Selectable 3.3V or 5V V
CC
User-Configurable x8 or x16 Operation
70 ns Maximum Access Time
28.6 MB/sec Burst Write Transfer Rate
1 Million Typical Erase Cycles per Block
56-Lead, 1.2 x 14 x 20 mm Advanced
Dual Die TSOP Package Technology
64 Independently Lockable Blocks
n
n
n
Intel鈥檚 DD28F032SA 32-Mbit FlashFile鈩?memory is a revolutionary architecture which enables the design of
truly mobile, high performance, personal computing and communication products. With innovative
capabilities, low power operation and very high read/program performance, the DD28F032SA is also the ideal
choice for designing embedded mass storage flash memory systems.
The DD28F032SA is the result of highly-advanced packaging innovation which encapsulates two 28F016SA
die in a single Dual Die Thin Small Outline Package (DDTSOP).
The DD28F032SA is the highest density, highest performance nonvolatile read/program solution for solid-
state storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F016SA
16-Mbit FlashFile memory), very high-cycling, low-power 3.3V operation, very fast program and read
performance and selective block locking provide a highly flexible memory component suitable for high-density
memory cards, Resident Flash Arrays and PCMCIA-ATA Flash Drives. The DD28F032SA鈥檚 dual read voltage
enables the design of memory cards which can be read/written in 3.3V and 5.0V systems interchangeably. Its
x8/x16 architecture allows the optimization of memory to processor interface. The flexible block locking option
enables bundling of executable application software in a Resident Flash Array or memory card. The
DD28F032SA will be manufactured on Intel鈥檚 0.6 碌m ETOX IV technology.
December 1996
Order Number: 290490-005