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DBES105A-99F/00 Datasheet

  • DBES105A-99F/00

  • Flip-Chip Dual Diode

  • 4頁(yè)

  • UMS

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DBES105a
Flip-Chip Dual Diode
GaAs Diode
Description
The DBES105a is a dual Schottky diode based
on a low cost 1碌m stepper process including a
bump technology. The parasitic inductances are
reduced and result in a very high operating
frequency.
This flip-chip dual diode has been designed for
high performance mixer applications.
Main Features
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High cut-off frequencies : 3THz
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High breakdown voltage : < -5V
@ 20碌A(chǔ)
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Good ideality factor : 1.2
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Low parasitic inductances
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Low cost technology
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Dimensions : 0.53 x 0.23 x 0.1mm
Main Characteristics
Tamb. = 25擄C
Symbol
Wu
Fco
n
BVak
Gate Width
Cut-off frequency
Ideality factor
Anode-cathode break-down voltage
Parameter
Typ
5
3
1.2
< -5
Unit
碌m
THz
V
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSDBES1051067 -08-Mar-01
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route D茅partementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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