TetraFET
D1210UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
B
C
1
2
D
4
M
3
E
F
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W 鈥?12.5V 鈥?175MHz
SINGLE ENDED
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
G
H
K
I
J
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
Tol.
0.005
0.005
5擄
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
DA
PIN 1
PIN 3
SOURCE
SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45擄
6.35
3.17
5.71
9.52
6.60
0.13
4.32
2.54
20.32
PIN 2
PIN 4
Tol.
0.13
0.13
5擄
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
DRAIN
GATE
Inches
0.975
0.725
45擄
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
鈥?LOW NOISE
鈥?HIGH GAIN 鈥?10 dB MINIMUM
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain 鈥?Source Breakdown Voltage
Gate 鈥?Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
40V
鹵20V
8A
鈥?5 to 150擄C
200擄C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
1
2
