TetraFET
D1028UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
(2 pls)
B
G
(typ)
2
1
H
D
3
P
(2 pls) A
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
300W 鈥?28V 鈥?175MHz
PUSH鈥揚ULL
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
E
(4 pls)
F
I
N
M
O
J
K
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1
GATE 2
DR
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Millimetres
19.05
10.77
45擄
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.57R
Tol.
0.50
0.13
5擄
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
PIN 2
PIN 4
鈥?LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
Inches
0.75
0.424
45擄
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
5擄
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
鈥?LOW NOISE
鈥?HIGH GAIN 鈥?13 dB MINIMUM
APPLICATIONS
鈥?/div>
VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain 鈥?Source Breakdown Voltage
Gate 鈥?Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
438W
70V
鹵20V
30A
鈥?5 to 150擄C
200擄C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
01/01
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