TetraFET
D1020UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
(2 pls)
B
G
(typ)
2
1
H
D
3
P
(2 pls) A
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W 鈥?28V 鈥?400MHz
PUSH鈥揚(yáng)ULL
FEATURES
鈥?EXTRA LOW C
rss
E
(4 pls)
F
I
N
M
O
J
K
鈥?SIMPLIFIED AMPLIFIER DESIGN
DRAIN 1
GATE 2
DR
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Millimetres
19.05
10.77
45擄
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.57R
Tol.
0.50
0.13
5擄
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
PIN 2
PIN 4
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?SIMPLE BIAS CIRCUITS
Inches
0.75
0.424
45擄
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
5擄
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
鈥?LOW NOISE
鈥?HIGH GAIN 鈥?10 dB MINIMUM
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 11/00
Power Dissipation
Drain 鈥?Source Breakdown Voltage *
Gate 鈥?Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
389W
70V
鹵20V
20A
鈥?5 to 150擄C
200擄C
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