N
EW
CZTA27
Central
DESCRIPTION
TM
Semiconductor Corp.
NPN HIGH VOLTAGE
DARLINGTON TRANSISTOR
The CENTRAL SEMICONDUCTOR CZTA27
type is a NPN Silicon Darlington Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for applications requiring extremely
high gain and high voltage.
SOT-223 CASE
MAXIMUM RATINGS
(TA=25擄C)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCES
VEBO
IC
PD
TJ,Tstg
Q
JA
60
10
500
2.0
-65 to +150
62.5
UNITS
V
V
mA
W
擄C
擄C/W
ELECTRICAL CHARACTERISTICS:
(TA=25擄C unless otherwise noted)
SYMBOL
ICBO
ICES
IEBO
BVCBO
BVCES
VCE(SAT)
VBE(ON)
hFE
hFE
fT
TEST CONDITIONS
VCB=50V
VCE=50V
VEB=10V
IC=100mA
IC=100mA
IC=100mA, IB=0.1mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
10,000
10,000
125
MHz
60
60
1.5
2.0
MIN
MAX
100
500
100
UNITS
nA
nA
nA
V
V
V
V
408