CZT3904 NPN
CZT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR
CZT3904, CZT3906 types are complementary
silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for small
signal general purpose and switching
applications.
SOT-223 CASE
MAXIMUM RATINGS
(TA=25
o
C)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
螛
JA
CZT3904
60
40
6.0
200
2.0
-65 to +150
62.5
CZT3906
40
40
5.0
UNITS
V
V
V
mA
W
o
C
o
C/W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS
(TA=25oC unless otherwise noted)
CZT3904
MIN MAX
50
60
40
6.0
0.20
0.30
0.65
0.85
0.95
40
70
100
300
60
30
CZT3906
MIN MAX
50
40
40
5.0
0.25
0.40
0.65
0.85
0.95
60
80
100
300
60
30
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10碌A(chǔ)
IC=1.0mA
IE=10碌A(chǔ)
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
UNITS
nA
V
V
V
V
V
V
V
308
1
2
