CZT3019
NPN SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CZT3019
type is an NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for high
current general purpose amplifier applications.
SOT-223 CASE
MAXIMUM RATINGS
(TA=25
o
C)
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ,Tstg
螛
JA
UNITS
V
V
V
A
A
W
o
C
o
C/W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
120
80
7.0
1.0
1.5
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS
(TA=25
o
C unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=90V
VEB=5.0V
IC=100碌A
IC=30mA
IE=100碌A
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
VCE=10V, IC=0.1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=1.0A
MIN
MAX
10
10
UNITS
nA
nA
V
V
V
V
V
V
120
80
7.0
0.2
0.5
1.1
50
90
100
50
15
300
306
1
2
