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CY7C199D-10ZXI Datasheet

  • CY7C199D-10ZXI

  • 256K (32K x 8) Static RAM

  • 930.23KB

  • 10頁

  • CYPRESS

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CY7C199D
256K (32K x 8) Static RAM
Features
鈥?Pin- and function-compatible with CY7C199C
鈥?High speed
鈥?t
AA
= 10 ns
鈥?Low active power
鈥?I
CC
= 80 mA @ 10 ns
鈥?Low CMOS standby power
鈥?I
SB2
= 3 mA
鈥?2.0V Data Retention
鈥?Automatic power-down when deselected
鈥?CMOS for optimum speed/power
鈥?TTL-compatible inputs and outputs
鈥?Easy memory expansion with CE and OE features
鈥?Available in Pb-free 28-pin 300-Mil wide Molded SOJ and
28-pin TSOP I packages
Functional Description
[1]
The CY7C199D is a high-performance CMOS static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE), an active
LOW Output Enable (OE) and tri-state drivers. This device has
an automatic power-down feature, reducing the power
consumption when deselected. The input and output pins (IO
0
through IO
7
) are placed in a high-impedance state when:
鈥?Deselected (CE HIGH)
鈥?Outputs are disabled (OE HIGH)
鈥?When the write operation is active(CE LOW and WE LOW)
Write to the device by taking Chip Enable (CE) and Write
Enable (WE) inputs LOW. Data on the eight IO pins (IO
0
through IO
7
) is then written into the location specified on the
address pins (A
0
through A
14
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins appears on the IO pins.
Logic Block Diagram
INPUT BUFFER
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
CE
WE
OE
IO0
IO1
ROW DECODER
32K x 8
ARRAY
SENSE AMPS
IO2
IO3
IO4
IO5
IO6
COLUMN DECODER
POWER
DOWN
IO7
A10
A12
A13
Note:
1. For guidelines on SRAM system design, please refer to the 鈥楽ystem Design Guidelines鈥?Cypress application note, available on the internet at
www.cypress.com.
A11
A14
Cypress Semiconductor Corporation
Document #: 38-05471 Rev. *D
鈥?/div>
198 Champion Court
鈥?/div>
San Jose
,
CA 95134-1709
鈥?/div>
408-943-2600
Revised March 01, 2007
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CY7C199D-10ZXI 產(chǎn)品屬性

  • 234

  • 集成電路 (IC)

  • 存儲(chǔ)器

  • -

  • RAM

  • SRAM - 異步

  • 256K (32K x 8)

  • 10ns

  • 并聯(lián)

  • 4.5 V ~ 5.5 V

  • -40°C ~ 85°C

  • 28-TSSOP（0.465"，11.8mm 寬）

  • 28-TSOP I

  • 托盤

  • 428-2013

CY7C199D-10ZXI相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy
    Cypress
  • 英文版
    32K x 8/9 Dual-Port Static RAM
    Cypress
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy
    Cypress
  • 英文版
    32K x 8/9 Dual-Port Static RAM
    Cypress
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT...
    CYPRESS
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT...
    CYPRESS [C...
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int...
    Cypress
  • 英文版
    16K x 16/18 Dual-Port Static RAM
    Cypress
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS [C...

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