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CY7C199BL-12ZC Datasheet

  • CY7C199BL-12ZC

  • 32K x 8 Static RAM

  • 15頁

  • CYPRESS

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PRELIMINARY
CY7C199B
32K x 8 Static RAM
Features
鈥?High speed
鈥?10 ns
鈥?Fast t
DOE
鈥?CMOS for optimum speed/power
鈥?Low active power
鈥?495 mW (max, 10 ns 鈥淟鈥?version)
鈥?Low standby power
鈥?0.275 mW (max, 鈥淟鈥?version)
鈥?2V data retention (鈥淟鈥?version only)
鈥?Easy memory expansion with CE and OE features
鈥?TTL-compatible inputs and outputs
鈥?Automatic power-down when deselected
is provided by an active LOW Chip Enable (CE) and active
LOW Output Enable (OE) and three-state drivers. This device
has an automatic power-down feature, reducing the power
consumption by 81% when deselected. The CY7C199B is in
the standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW Write Enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE and WE inputs
are both LOW, data on the eight data input/output pins (I/O
0
through I/O
7
) is written into the memory location addressed by
the address present on the address pins (A
0
through A
14
).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Functional Description
The CY7C199B is a high-performance CMOS static RAM or-
ganized as 32,768 words by 8 bits. Easy memory expansion
Logic Block Diagram
Pin Configurations
DIP / SOJ / SOIC
Top View
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
22
23
24
25
26
27
28
1
2
3
4
5
6
7
LCC
Top View
A7
A6
A5
VCC
WE
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
C199B鈥?
I/O2
GND
I/O3
I/O4
I/O5
3 2 1 28 27
4
26 A
4
5
25 A
3
6
24 A
2
7
23 A
1
8
22 OE
9
21 A
0
10
20 CE
11
19 I/O
7
12
18 I/O
6
1314151617
C199鈥?
I/O
0
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
CE
WE
OE
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
1024 x 32 x 8
ARRAY
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A
4
A
3
A
2
A
1
OE
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
3
I/O
4
I/O
5
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
21
20
19
18
17
16
15
14
13
12
11
10
9
8
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
TSOP I
Top View
(not to scale)
A
10
A
11
A
12
A
13
A
14
C199B鈥?
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
14
A
13
A
12
C199鈥?
Selection Guide
199B-8
Maximum Access Time (ns)
Maximum Operating
Current (mA)
L
Maximum CMOS
Standby Current (mA)
L
8
120
0.5
199B-10
10
110
90
0.5
0.05
199B-12
12
160
90
10
0.05
199B-15
15
155
90
10
0.05
199B-20
20
150
90
10
0.05
199B-25
25
150
80
10
0.05
199B-35
35
140
70
10
0.05
199B-45
45
140
10
Shaded area contains advance information.
Cypress Semiconductor Corporation
鈥?/div>
3901 North First Street
鈥?/div>
San Jose
鈥?/div>
CA 95134
鈥?/div>
408-943-2600
June 13, 2000

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