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CY7C1399V-25ZC Datasheet

  • CY7C1399V-25ZC

  • x8 SRAM

  • 174.49KB

  • 9頁

  • ETC

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CY7C1399V
32K x 8 3.0V Static RAM
Features
鈥?Single 3.0V power supply
鈥?Ideal for low-voltage cache memory applications
鈥?High speed
鈥?12/15 ns
鈥?Low active power
鈥?198 mW (max.)
鈥?Low CMOS standby power (L)
鈥?165
碌W
(max.), f=f
MAX
鈥?2.0V data retention (L)
鈥?40
碌W
(max.)
鈥?Low-power alpha immune 6T cell
鈥?Plastic SOJ and TSOP packaging
pansion is provided by an active LOW chip enable (CE) and
active LOW output enable (OE) and three-state drivers. The
device has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected.
An active LOW write enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE and WE inputs
are both LOW, data on the eight data input/output pins (I/O
0
through I/O
7
) is written into the memory location addressed by
the address present on the address pins (A
0
through A
14
).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH. The CY7C1399V is available in standard
300-mil-wide SOJ and 28-pin TSOP type I packages.
Functional Description
The CY7C1399V is a high-performance 3.0V CMOS static
RAM organized as 32,768 words by 8 bits. Easy memory ex-
Logic Block Diagram
Pin Configurations
SOJ
Top View
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A
4
A
3
A
2
A
1
OE
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
INPUTBUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
CE
WE
OE
A
10
A
11
A
12
A
13
A
14
ROW DECODER
I/O
0
I/O
1
SENSE AMPS
I/O
2
I/O
3
I/O
4
32K x 8
ARRA
Y
C1399V-2
I/O
5
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
C1399V-1
Selection Guide
7C1399V鈭?2
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (碌A(chǔ))
Maximum CMOS Standby Current (碌A(chǔ))
Shaded area contains advanced information.
7C1399V鈭?5
15
55
500
50
7C1399V鈭?0
20
50
500
50
7C1399V鈭?5
25
45
500
50
7C1399V鈭?5
35
40
500
50
12
60
500
L
50
Cypress Semiconductor Corporation
鈥?/div>
3901 North First Street
鈥?/div>
San Jose
鈥?/div>
CA 95134 鈥?/div>
408-943-2600
January 1996 - Revised June 1996

CY7C1399V-25ZC相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy
    Cypress
  • 英文版
    32K x 8/9 Dual-Port Static RAM
    Cypress
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy
    Cypress
  • 英文版
    32K x 8/9 Dual-Port Static RAM
    Cypress
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT...
    CYPRESS
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT...
    CYPRESS [C...
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int...
    Cypress
  • 英文版
    16K x 16/18 Dual-Port Static RAM
    Cypress
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS [C...

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