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CY7C1399B-15VXI Datasheet

  • CY7C1399B-15VXI

  • 256K(32K x 8) Static RAM

  • 0頁(yè)

  • CYPRESS

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CY7C1399B
256K(32K x 8) Static RAM
Features
鈥?Single 3.3V power supply
鈥?Ideal for low-voltage cache memory applications
鈥?High speed
鈥?10/12/15 ns
鈥?Low active power
鈥?216 mW (max.)
鈥?Low-power alpha immune 6T cell
鈥?Plastic SOJ and TSOP packaging
active LOW Output Enable (OE) and three-state drivers. The
device has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location
addressed by the address present on the address pins (A
0
through A
14
). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. The CY7C1399B is available in 28-pin standard
300-mil-wide SOJ and TSOP Type I packages.
Functional Description
[1]
The CY7C1399B is a high-performance 3.3V CMOS Static
RAM organized as 32,768 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE) and
Logic Block Diagram
Pin Configurations
SOJ
Top View
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O 0
INPUT BUFFER
I/O
0
I/O
1
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
CE
WE
OE
ROW DECODER
I/O
2
SENSE AMPS
32K x 8
ARRAY
I/O
3
I/O
4
I/O
5
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A
4
A
3
A
2
A
1
OE
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
A
10
A
11
A
12
A
13
Selection Guide
1399B-10
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
L
10
60
500
50
1399B-12
12
55
500
50
1399B-15
15
50
500
50
1399B-20
20
45
500
50
Unit
ns
mA
碌A(chǔ)
碌A(chǔ)
Note:
1. For guidelines on SRAM system design, please refer to the 鈥楽ystem Design Guidelines鈥?Cypress application note, available on the internet at www.cypress.com.
A
14
Cypress Semiconductor Corporation
Document #: 38-05071 Rev. *D
鈥?3901 North First Street
鈥?San Jose
,
CA 95134
鈥?408-943-2600
Revised July 11, 2005

CY7C1399B-15VXI 產(chǎn)品屬性

  • 27

  • 集成電路 (IC)

  • 存儲(chǔ)器

  • -

  • RAM

  • SRAM - 異步

  • 256K (32K x 8)

  • 15ns

  • 并聯(lián)

  • 3 V ~ 3.6 V

  • -40°C ~ 85°C

  • 28-BSOJ

  • 28-SOJ

  • 管件

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