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CY7C1332AV25-250BGXC Datasheet

  • CY7C1332AV25-250BGXC

  • 18-Mbit (512K x 36/1Mbit x 18) Pipelined Register-Register L...

  • 19頁

  • CYPRESS

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PRELIMINARY
CY7C1330AV25
CY7C1332AV25
18-Mbit (512K x 36/1Mbit x 18)
Pipelined Register-Register Late Write
Features
鈥?Fast clock speed: 250, 200 MHz
鈥?Fast access time: 2.0, 2.25 ns
鈥?Synchronous Pipelined Operation with Self-timed Late
Write
鈥?Internally synchronized registered outputs eliminate
the need to control OE
鈥?2.5V core supply voltage
鈥?1.4鈥?.9V V
DDQ
supply with V
REF
of 0.68鈥?.95V
鈥?Wide range HSTL I/O Levels
鈥?Single Differential HSTL clock Input K and K
鈥?Single WE (READ/WRITE) control pin
鈥?Individual byte write (BWS
[a:d]
) control (may be tied
LOW)
鈥?Common I/O
鈥?Asynchronous Output Enable Input
鈥?Programmable Impedance Output Drivers
鈥?JTAG boundary scan for BGA packaging version
鈥?Available in a 119-ball BGA package (CY7C1330AV25
and CY7C1332AV25)
Functional Description
The CY7C1330AV25 and CY7C1332AV25 are high perfor-
mance, Synchronous Pipelined SRAMs designed with late
write operation. These SRAMs can achieve speeds up to 250
MHz. Each memory cell consists of six transistors.
Late write feature avoids an idle cycle required during the
turnaround of the bus from a read to a write.
All synchronous inputs are gated by registers controlled by a
positive-edge-triggered Clock Input (K). The synchronous
inputs include all addresses (A), all data inputs (DQ
[a:d]
), Chip
Enable (CE), Byte Write Selects (BWS
[a:d]
), and read-write
control (WE). Read or Write Operations can be initiated with
the chip enable pin (CE). This signal allows the user to
select/deselect the device when desired.
Power down feature is accomplished by pulling the
Synchronous signal ZZ HIGH.
Output Enable (OE) is an asynchronous input signal. OE can
be used to disable the outputs at any given time.
Four pins are used to implement JTAG test capabilities. The
JTAG circuitry is used to serially shift data to and from the
device. JTAG inputs use LVTTL/LVCMOS levels to shift data
during this testing mode of operation.
Configuration
CY7C1330AV25 鈥?512K x 36
CY7C1332AV25 鈥?1M x 18
Logic Block Diagram
K,K
Clock
Buffer
D Data-In REG.
CE Q (2stage)
OUTOUT
REGISTERS
and LOGIC
A
x
CE
CONTROL
and WRITE
LOGIC
512Kx36
1Mx18
DQ
x
WE
BWS
x
MEMORY
ARRAY
ZZ
OE
A
X
DQ
X
BWS
X
512Kx36
X = 18:0 X = a, b, c, d X = a, b, c, d
1Mx18
X = 19:0
X = a, b
X = a, b
Cypress Semiconductor Corporation
Document No: 001-07844 Rev. *A
鈥?/div>
198 Champion Court
鈥?/div>
San Jose
,
CA 95134-1709
鈥?/div>
408-943-2600
Revised September 20, 2006
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CY7C1332AV25-250BGXC相關(guān)型號(hào)PDF文件下載

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    版本
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  • 英文版
    16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy
    Cypress
  • 英文版
    32K x 8/9 Dual-Port Static RAM
    Cypress
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy
    Cypress
  • 英文版
    32K x 8/9 Dual-Port Static RAM
    Cypress
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS
  • 英文版
    64K/128K x 8/9 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT...
    CYPRESS
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT...
    CYPRESS [C...
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int...
    Cypress
  • 英文版
    16K x 16/18 Dual-Port Static RAM
    Cypress
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS [C...
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
    CYPRESS [C...

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