041BV33
CY7C1041BV33
256K x 16 Static RAM
Features
鈥?High speed
鈥?t
AA
= 12 ns
鈥?Low active power
鈥?612 mW (max.)
鈥?Low CMOS standby power (Commercial L version)
鈥?1.8 mW (max.)
鈥?2.0V Data Retention (600
碌W
at 2.0V retention)
鈥?Automatic power-down when deselected
鈥?TTL-compatible inputs and outputs
鈥?Easy memory expansion with CE and OE features
written into the location specified on the address pins (A
0
through A
17
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
8
through I/O
15
) is written into the location
specified on the address pins (A
0
through A
17
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
0
to I/O
7
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
8
to I/O
15
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
0
through I/O
15
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1041BV33 is available in a standard 44-pin
400-mil-wide body width SOJ and 44-pin TSOP II package
with center power and ground (revolutionary) pinout.
Functional Description
The CY7C1041BV33 is a high-performance CMOS Static
RAM organized as 262,144 words by 16 bits.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
Logic Block Diagram
INPUT BUFFER
Pin Configuration
SOJ
TSOP II
Top View
A
0
A
1
A
2
A
3
A
4
CE
I/O
0
I/O
1
I/O
2
I/O
3
V
CC
V
SS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
5
A
6
A
7
A
8
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
256K x 16
ARRAY
1024 x 4096
I/O
0
鈥?I/O
7
I/O
8
鈥?I/O
15
COLUMN
DECODER
BHE
WE
CE
OE
BLE
A
17
A
16
A
15
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
14
A
13
A
12
A
11
A
10
ROW DECODER
Selection Guide
-12
Maximum Access Time (ns)
Maximum Operating Current (mA) Comm鈥檒
Ind鈥檒
Maximum CMOS Standby
Current (mA)
Com鈥檒/Ind鈥檒
Com鈥檒
L
12
190
-
8
0.5
-15
15
170
190
8
0.5
-17
17
160
180
8
0.5
-20
20
150
170
8
0.5
-25
25
130
150
8
0.5
Cypress Semiconductor Corporation
Document #: 38-05168 Rev. **
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
SENSE AMPS
鈥?/div>
3901 North First Street
鈥?/div>
San Jose
鈥?/div>
CA 95134 鈥?408-943-2600
Revised November 15, 2001
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