1CY7C1019V33
CY7C1019BV33
CY7C1018BV33
128K x 8 Static RAM
Features
鈥?High speed
鈥?t
AA
= 10 ns
鈥?CMOS for optimum speed/power
鈥?Center power/ground pinout
鈥?Automatic power-down when deselected
鈥?Easy memory expansion with CE and OE options
鈥?Functionally equivalent to CY7C1019V33 and/or
CY7C1018V33
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
0
through I/O
7
) is then written into the location speci-
fied on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1019BV33 is available in a standard 400-mil-wide
package. The CY7C1018BV33 is available in a standard
300-mil-wide package.
Functional Description
The CY7C1019BV33/CY7C1018BV33 is a high-performance
CMOS static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE), an active LOW Output Enable (OE), and three-state driv-
ers. This device has an automatic power-down feature that
significantly reduces power consumption when deselected.
Logic Block Diagram
Pin Configurations
SOJ
Top View
A
0
A
1
A
2
A
3
CE
I/O
0
I/O
1
V
C C
V
SS
I/O
2
I/O
3
WE
A
4
A
5
A
6
A
7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
16
A
15
A
14
A
13
OE
I/O
7
I/O
6
V
S S
V
C C
I/O
5
I/O
4
A
12
A
11
A
10
A
9
A
8
I/O0
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
I/O1
ROW DECODER
I/O2
SENSE AMPS
512 x 256 x 8
ARRAY
I/O3
I/O4
I/O5
I/O6
CE
WE
OE
COLUMN
DECODER
POWER
DOWN
I/O7
Selection Guide
7C1019BV33-10
7C1018BV33-10
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
L
10
175
5
鈭?/div>
7C1019BV33-12
7C1018BV33-12
12
160
5
0.5
7C1019BV33-15
7C1018BV33-15
15
145
5
0.5
Cypress Semiconductor Corporation
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
鈥?/div>
3901 North First Street
鈥?/div>
San Jose
鈥?/div>
CA 95134
鈥?/div>
408-943-2600
June 11, 2001
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英文版
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英文版
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英文版
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英文版
32K x 8/9 Dual-Port Static RAM
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英文版
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英文版
64K/128K x 8/9 Dual-Port Static RAM
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英文版
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英文版
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英文版
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT...
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英文版
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT...
CYPRESS [C...
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英文版
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int...
Cypress
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英文版
16K x 16/18 Dual-Port Static RAM
Cypress
-
英文版
32K/64K x 16/18 Dual-Port Static RAM
CYPRESS
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英文版
32K/64K x 16/18 Dual-Port Static RAM
CYPRESS [C...
-
英文版
32K/64K x 16/18 Dual-Port Static RAM
CYPRESS
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英文版
32K/64K x 16/18 Dual-Port Static RAM
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