鈥?/div>
100
碌W
鈥?Automatic power-down when deselected
鈥?TTL-compatible inputs and outputs
memory expansion is provided by an active LOW Chip Enable
(CE) and three-state drivers. These devices have an automatic
power-down feature that reduces power consumption by more
than 65% when deselected.
Writing to the devices is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the input pin
(D
IN
) is written into the memory location specified on the ad-
dress pins (A
0
through A
19
).
Reading from the devices is accomplished by taking Chip En-
able (CE) LOW while Write Enable (WE) remains HIGH. Under
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the data output (D
OUT
)
pin.
The output pin (D
OUT
) is placed in a high-impedance state
when the device is deselected (CE HIGH) or during a write
operation (CE and WE LOW).
The CY7C107 is available in a standard 400-mil-wide SOJ; the
CY7C1007 is available in a standard 300-mil-wide SOJ.
Functional Description
The CY7C107 and CY7C1007 are high-performance CMOS
static RAMs organized as 1,048,576 words by 1 bit. Easy
Logic Block Diagram
D
IN
Pin Configuration
SOJ
Top View
A
10
A
11
A
12
A
13
A
14
A
15
NC
A
16
A
17
A
18
A
19
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
ROW DECODER
512x2048
ARRA
Y
D
OUT
D
OUT
WE
GND
V
CC
A
9
A
8
A
7
A
6
A
5
A
4
NC
A
3
A
2
A
1
A
0
D
IN
CE
107-2
COLUMN
DECODER
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
A
19
POWER
DOWN
SENSE AMPS
CE
WE
107-1
Selection Guide
7C107-12
7C1007-12
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Maximum Standby
Current (mA)
12
150
50
7C107-15
7C1007-15
15
135
40
7C107-20
7C1007-20
20
125
30
7C107-25
7C1007-25
25
120
30
7C107-35
35
110
25
Cypress Semiconductor Corporation
鈥?/div>
3901 North First Street
鈥?/div>
San Jose
鈥?/div>
CA 95134 鈥?/div>
408-943-2600
December 1992 鈥?Revised September 3, 1999
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