CXT5401
SURFACE MOUNT
PNP SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5401
type is an PNP silicon transistor manufactured
bythe epitaxial planar process, epoxy molded in a
surface mount package, designed for high
voltage amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS
(TA=25擄C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
螛
JA
UNITS
V
V
V
mA
W
擄C
擄C/W
160
150
5.0
500
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS
(TA=25擄C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=120V
50
ICBO
VCB=120V, TA=100擄C
50
BVCBO
IC=100碌A(chǔ)
160
BVCEO
IC=1.0mA
150
BVEBO
IE=10碌A(chǔ)
5.0
VCE(SAT)
IC=10mA, IB=1.0mA
0.2
VCE(SAT)
IC=50mA, IB=5.0mA
0.5
VBE(SAT)
IC=10mA, IB=1.0mA
1.0
VBE(SAT)
IC=50mA, IB=5.0mA
1.0
hFE
VCE=5.0V, IC=1.0mA
50
hFE
VCE=5.0V, IC=10mA
60
240
hFE
VCE=5.0V, IC=50mA
50
fT
VCE=10V, IC=10mA, f=100MHz
100
300
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
40
200
NF
VCE=5.0V, IC=200碌A(chǔ), RS=10鈩?/div>
f=10Hz to 15.7kHz
8.0
UNITS
nA
碌A(chǔ)
V
V
V
V
V
V
V
MHz
pF
dB
R3 ( 20-December 2001)
1
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