CXT2222A
SURFACE MOUNT
NPN SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT2222A
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for small signal
general purpose and switching applications.
SOT-89 CASE
MAXIMUM RATINGS
(TA=25擄C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
螛
JA
UNITS
V
V
V
mA
W
擄C
擄C/W
75
40
6.0
600
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS
(TA=25擄C unless otherwise noted)
SYMBOL
ICBO
ICBO
IEBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
TEST CONDITIONS
VCB=60V
VCB=60V, TA=125擄C
VEB=3.0V
VCE=60V, VEB=3.0V
IC=10碌A(chǔ)
IC=10mA
IE=10碌A(chǔ)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1.0V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
MIN
MAX
10
10
10
10
UNITS
nA
碌A(chǔ)
nA
nA
V
V
V
V
V
V
V
75
40
6.0
0.6
35
50
75
100
50
40
300
0.3
1.0
1.2
2.0
300
MHz
pF
pF
8.0
25
R3 ( 19-December 2001)
1
2
