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CXK77B3610GB-6 Datasheet

  • CXK77B3610GB-6

  • High Speed Bi-CMOS Synchronous Static RAM

  • 16頁

  • SONY   SONY

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CXK77B3610GB
-6/7
High Speed Bi-CMOS Synchronous Static RAM
Description
The CXK77B3610GB-6/7 is a high speed 1M bit
Bi-CMOS synchronous statis RAM organized as
32768 words by 36 bits. This SRAM integrates input
registers, high speed SRAM and write buffer onto a
single monolithic IC and features the delayed write
system to reduce the dead cycles.
Features
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Fast cycle time
CXK77B3610GB-6
CXK77B3610GB-7
(Cycle)
6ns
7ns
(Frequency)
166MHz
142MHz
119 pin BGA (Plastic)
Preliminary
For the availability of this product, please contact the sales office.
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Inputs and outputs are LVTTL/LVCMOS compatible
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Single 3.3V power supply: 3.3V 鹵 0.15V
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Byte-write possible
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OE asynchronization
JTAG test circuit
Package 119TBGA
3 kinds of synchronous operation mode
Register-Register mode (R-R mode)
Register-Flow Thru mode (R-F mode)
Register-Latch mode (R-L mode)
Function
32768 word
脳
36bit High Speed Bi-CMOS Synchronous SRAM
Structure
Silicon gate Bi-CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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PE95128-PS

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