CXK5V8257BTM/BYM/BM
-70LL/10LL
32768-word
脳
8-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
The CXK5V8257BTM/BYM/BM is 262,144 bits
high speed CMOS static RAM organized as 32768-
words by 8 bits.
A polysilicon TFT cell technology realized extermely
low stand-by current and higher data retention stability.
Operating on a single 3.3V supply, directly LVTTL
compatible (All inputs and outputs).
And special feature are, low power consumption,
high speed and broad package line-up.
The CXK5V8257BTM/BYM/BM is a suitable RAM
for portable equipment with battery back up.
Features
鈥?/div>
Single +3.3V supply: 3.3V 鹵0.3V
鈥?/div>
Directly LVTTL compatible: All inputs and outputs
鈥?/div>
Fast access time:
(Access time)
CXK5V8257BTM/BYM/BM
-70LL
70ns (Max.)
-10LL
100ns (Max.)
鈥?/div>
Low standby current:
CXK5V8257BTM/BYM/BM
-70LL/10LL
3.5碌A(chǔ) (Max.)
鈥?/div>
Low power data retention: 2.0V (Min.)
鈥?/div>
Available in many packages
CXK5V8257BTM/BYM 8mm
脳
13.4mm 28 pin
TSOP Package
CXK5V8257BM
450mil 28 pin
SOP Package
Function
32768-word
脳
8 bit static RAM
Structure
Silicon gate CMOS IC
CXK5V8257BM
28 pin SOP (Plastic)
CXK5V8257BTM
28 pin TSOP (Plastic)
CXK5V8257BYM
28 pin TSOP (Plastic)
Block Diagram
A14
A13
A12
A11
A9
A8
A7
A6
A5
A10
A4
A3
A2
A1
A0
OE
WE
CE
I /O1 I /O8
Buffer
Row
Decoder
Memory
Matrix
512
脳
512
V
CC
GND
Buffer
I /O Gate
Column
Decoder
Buffer
I /O Buffer
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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