CXK5V81000ATM
-85LLX/10LLX
131072-word
脳
8-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
The CXK5V81000ATM is a high speed CMOS
static RAM organized as 131072-words by 8-bits.
A
polysilicon
TFT
cell
technology
realized
extremely low stand-by current and higher data
retention stability.
Operating on a single 3.3V supply, and special
feature are low power consumption, high speed.
The CXK5V81000ATM is a suitable RAM for
portable equipment with battery back up.
Features
鈥?/div>
Extended operating temperature range:
鈥?5 to +85擄C
鈥?/div>
Fast access time:
(Access time)
-85LLX
85ns (Max.)
-10LLX
100ns (Max.)
Low standby current:
28碌A (Max.)
Low data retention current: 24碌A (Max.)
Single 3.3V supply:
3.3V 鹵 0.3V
Low voltage data retention: 2.0V (Min.)
Package
8mm
脳
20mm 32 pin TSOP package
A10
A11
A9
A8
A13
A15
A16
A14
A12
A7
32 pin TSOP (Plastic)
Block Diagram
Buffer
Row
Decoder
Memory
Matrix
1024
脳
512
V
CC
GND
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
A6
A5
A4
A3
A2
A1
A0
OE
WE
Buffer
I/O Gate
Column
Decoder
Buffer
I/O Buffer
I/O1 I/O8
Function
131072-word x 8-bit static RAM
Structure
Silicon gate CMOS IC
CE1
CE2
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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