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CXK5V16100TM-10LLX Datasheet

  • CXK5V16100TM-10LLX

  • 65536-word X 16-bit High Speed CMOS Static RAM

  • 155.35KB

  • 10頁

  • SONY   SONY

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CXK5V16100TM
-85LLX/10LLX
65536-word
脳
16-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
CXK5V16100TM is a general purpose high speed
CMOS static RAM organized as 65536-words by
16-bits. Operating on a single 3.3V supply, this
asynchronous IC is suitable for high speed and low
power consumption applications where battery back
up for nonvolatility is required.
Features
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Extended operating temperature range: 鈥?5 to +85擄C
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Fast access time:
-85LLX
-10LLX
(Access time)
85ns (max.)
100ns (max.)
Function
65536-word
脳
16-bit static RAM
Structure
Silicon gate CMOS IC
44 pin TSOP (PIastic)
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Low power consumption operation:
Standby / DC operation
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鈥?/div>
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1.7碌W (typ.) / 3.3mW (typ.)
Single 3.3V supply: 3.3V鹵0.3V
Fully static memory: No clock or timing strobe
required
Equal access and cycle time
Common data input and output: three state output
Directly LVTTL compatible: All inputs and outputs
Low voltage data retention: 2.0V (min.)
400mil 44pin TSOP (type II) package
Block Diagram
A1
A0
A7
A6
A5
A4
A3
A2
A15
A14
GND
Vcc
Memory
Matrix
512
脳
1024
Row
Decoder
Memory
Matrix
512
脳
1024
Vcc
Buffer
GND
CE
UB
LB
OE
WE
Control
I/O Gate
Column
Decoder
Pre
Decoder
I/O Gate
Column
Decoder
A13
A12
A11
A10
A9
A8
I/O Buffer
I/O Buffer
Buffer
I/O1
I/O8
I/O9 I/O16
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E93869A57-PP

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