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CXK5B81020J/TM

-12

131072-word

脳

8-bit High Speed Bi-CMOS Static RAM

For the availability of this product, please contact the sales office.

Description

CXK5B81020J/TM is a high speed 1M bit Bi-CMOS

static RAM organized as 131072 words by 8 bits.

Operating on a single 3.3V supply this asynchronous

IC is suitable for use in high speed and low power

applications.

Features

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Single 3.3V power supply: 3.3V 鹵 0.3V

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Fast access time

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Low standby current:

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Low power operation

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Package line-up

Dual Vcc/Vss

CXK5B81020J

CXK5B81020TM

400mil 32pin SOJ package

400mil 32pin TSOP package

12ns (Max.)

10mA (Max.)

864mW (Max.)

Function

131072 word

脳

8-bit static RAM

Structure

Silicon gate Bi-CMOS IC

CXK5B81020J

32 pin SOJ (PIastic)

CXK5B81020TM

32 pin TSOP (PIastic)

Block Diagram

A15

A16

A9

A8

A13

A14

A11

A10

Buffer

Row

Decoder

Memory

Matrix

256

脳

4096

Pin Configuration

(Top View)

Pin Description

Symbol

A0 to A16

I/O1 to I/O8

CE

WE

OE

V

CC

GND

NC

Description

Address input

Data input

Chip enable input

Write enable input

Output enable input

+3.3V power supply

Ground

No connection

A3

Vcc

A2

A1

A0

CE

GND

1

2

3

4

5

32

A4

31

A5

30

A6

29

A7

28

OE

27

I/O8

26

I/O7

25

GND

24

Vcc

23

I/O6

22

I/O5

2

A8

1

20

A9

19

A10

18

A11

17

A12

I/O1

6

I/O2

7

Vcc

8

GND

9

A12

A5

A4

A3

A0

A2

A1

A6

A7

Buffer

I/O Gate

Column

Decoder

I/O3

1

0

I/O4

11

WE

12

A16

13

A15

14

A14

15

A13

16

WE

OE

CE

I/O

Buffer

I/O1 I/O8

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

鈥?鈥?/div>

E93707B58-PP

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CXK5B81020TM-12 Datasheet

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