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CXK5B41020TM

-12

262144-word

脳

4-bit High Speed Bi-CMOS Static RAM

For the availability of this product, please contact the sales office.

Description

CXK5B41020TM is a high speed 1M bit Bi-CMOS

static RAM organized as 262144 words by 4 bits.

Operating on a single 3.3V supply this asynchronous

IC is suitable for use in high speed and low power

applications.

Features

鈥?/div>

Single 3.3V power supply: 3.3V鹵0.3V

鈥?/div>

Fast access time

鈥?/div>

Low standby current:

鈥?/div>

Low power operation

鈥?/div>

Package line-up

Dual Vcc/Vss

CXK5B41020TM 400mil 32pin TSOP package

12ns (Max.)

10mA (Max.)

792mW (Max.)

Function

262144 word

脳

4-bit static RAM

Structure

Silicon gate Bi-CMOS IC

32 pin TSOP (PIastic)

Block Diagram

A16

A17

A10

A9

A14

A15

A12

A11

Buffer

Row

Decoder

Memory

Matrix

256

脳

4096

Pin Configuration

(Top View)

NC

Vcc

A3

A2

A1

A0

GND

CE

I/O1

Vcc

1

2

3

4

5

6

7

8

32

A4

31

A5

30

A6

29

A7

28

A8

27

OE

26

I/O4

25

GND

24

Vcc

23

I/O3

22

A9

21

A10

20

A11

19

A12

18

A13

17

NC

Pin Description

Symbol

A0 to A17

I/O1 to I/O4

CE

WE

OE

V

CC

GND

NC

Description

Address input

Data input/output

Chip enable input

Write enable input

Output enable input

+3.3V power supply

Ground

No connection

GND

9

A6

A13

A5

A4

A3

A0

A2

A1

A7

A8

I/O Gate

Column

Decoder

I/O2

10

WE

11

A17

12

A16

13

A15

14

A14

15

NC

16

Buffer

WE

OE

CE

I/O Buffer

I/O1 I/O4

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

鈥?鈥?/div>

E93726-ST

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CXK5B41020TM-12 Datasheet

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