Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
NPN/PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL
TRANSISTORS
CVG639 (NPN)
CVG640 (PNP)
TO-237
EBC
Driver Stages of Audio Amplifier Application
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
DESCRIPTION
SYMBOL
VALUE
VCBO
150
Collector -Base Voltage
VCEO
135
Collector -Emitter Voltage
VEBO
5.0
Emitter -Base Voltage
IC
1.0
Collector Current Continuous
ICM
1.5
Peak
IB
100
Base Current Continuous
IBM
200
Peak
PD
750
Power Dissipation@ Ta=25 deg C
6.0
Derate Above 25 deg C
PD
2.5
Power Dissipation@ Tc=25 deg C
20
Derate Above 25 deg C
Tj, Tstg
-55 to +150
Operating & Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
Base Emitter on Voltage
Collector Emitter Saturation Voltage
DC Current Gain
VCEO
VCBO
VEBO
ICBO
IC=10mA, IB=0
IC=100uA.IE=0
IE=10uA, IC=0
VCB=30V, IE=0
VCB=30V, IE=0, Ta=125 deg C
VBE(on) * IC=500mA, VCE=2V
VCE(Sat) * IC=500mA, IB=50mA
hFE
IC=5mA, VCE=2V
IC=150mA,VCE=2V *
IC=500mA,VCE=2V *
UNITS
V
V
V
A
A
mA
mA
mW
mW/deg C
W
mW/deg C
deg C
VALUE
Min
Max
135
-
150
-
5.0
-
-
100
-
10
-
1.0
-
0.5
25
-
80
-
15
-
UNITS
V
V
V
nA
uA
V
V
Continental Device India Limited
Data Sheet
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