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Rugged, Passivated Chip Design
Absolute Maximum Ratings
Characteristic
Reverse Voltage (V
R
)
Forward Current (I
F
)
Power Dissipation (P
D
) @ 25擄C
Operating Temperature (T
OP
)
Storage Temperature (T
ST
)
Value
Breakdown Voltage
100 mA
250 mW
-55 to +150擄C
-65 to +200擄C
Description
Alpha鈥檚 product line of silicon step recovery diode chips are
designed for use in high order frequency multiplier, comb
generator and pulse shaping applications. These mesa
designed chips have a small outline (12 x 12 mils nominal)
and are fully passivated resulting in low leakage current and
high reliability. The CVB1031-000 may be used at input
frequencies below 50 MHz and will generate harmonics
beyond 12 GHz. The CVB1151-000 may be used at input
frequencies below 100 MHz and will generate harmonics
beyond 18 GHz.
Electrical Characteristics at 25擄C
Part
Number
CVB1031-000
CVB1151-000
Breakdown
Voltage
(V)
Min.
30
15
C
J
@ 6 V
(pF)
Min.
0.25
0.25
Max.
0.5
0.5
C
J
@ 0 V
(pF)
Typ.
0.5
0.4
Carrier
Lifetime
(nS)
Min.
20
10
Transition
Cutoff
Input
Outut
Time
Frequency Frequency Frequency Outline
(pS)
(GHz)
(MHz)
(GHz)
Drawing
Max.
100
70
Min.
300
300
Typ.
50鈥?000
100鈥?000
Typ.
5鈥?2
9鈥?8
150-801
150-806
1. Breakdown voltage specified at 10
碌A(chǔ).
2. Capacitance specified at 1 MHz.
3. Carrier lifetime specified at 10 mA.
4. Transition time specified at V
R
= 10 V and I
F
= 10 mA.
5. Cutoff frequency calculated from C
J
@ 6 V and R
S
at 100 mA, 100 MHz.
Skyworks Solutions, Inc.
[978] 241-7000
鈥?/div>
Fax
[978] 241-7906
鈥?/div>
Email
sales@skyworksinc.com
鈥?/div>
www.skyworksinc.com
Specifications subject to change without notice. 8/01A
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