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Semiconductor

January 1999

CT

T

ODU CEMEN 7

PR

774

ETE

PLA

SOL DED RE 800-442-

OB

EN

om

s 1-

OMM lication harris.c

EC

NO R ntral App entapp@

High-Voltage Diode Array For

Ce

: c

Call or email

Industrial and Military

CA3141

Commercial,

Applications

Features

鈥?Matched Monolithic Construction

- V

F

Match (Each Diode Pair) . . . . 0.55mV At I

F

= 1mA

鈥?Low Diode Capacitance. . . . . . . 0.3pF (Typ) at V

R

= 2V

鈥?High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)

鈥?Low Reverse (Leakage) Current . . . . . . . 100nA (Max)

Description

The CA3141E High Voltage Diode Array Consists of ten gen-

eral purpose high reverse breakdown diodes. Six diodes are

internally connected to form three common cathode diode

pairs, and the remaining four diodes are internally connected

to form two common anode diode pairs. Integrated circuit

construction assures excellent static and dynamic matching

of the diodes, making the CA3141 extremely useful for a

wide variety of applications in communications and switching

systems.

Applications

鈥?Balanced Modulators or Demodulators

鈥?Analog Switches

鈥?High-Voltage Diode Gates

鈥?Current Ratio Detectors

Part Number Information

PART NUMBER

CA3141E

TEMP.

RANGE (

o

C)

-55 to 125

PACKAGE

16 Ld PDIP

PKG.

NO.

E16.3

Pinout

CA3141

(PDIP)

TOP VIEW

1

2

3

4

5

6

7

8

D

5

D

6

D

2

D

3

D

9

D

7

D

1

D

10

16

15

14

13

12

11

10

9

D

4

D

8

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.

Copyright

漏

Harris Corporation 1999

File Number

906.4

1

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