CA3127
August 1996
High Frequency NPN Transistor Array
Description
The CA3127 consists of 鏗乿e general purpose silicon NPN
transistors on a common monolithic substrate. Each of the
completely isolated transistors exhibits low 1/f noise and a
value of f
T
in excess of 1GHz, making the CA3127 useful
from DC to 500MHz. Access is provided to each of the termi-
nals for the individual transistors and a separate substrate
connection has been provided for maximum application 鏗俥xi-
bility. The monolithic construction of the CA3127 provides
close electrical and thermal matching of the 鏗乿e transistors.
Features
鈥?Gain Bandwidth Product (f
T
). . . . . . . . . . . . . . . . >1GHz
鈥?Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
鈥?Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
鈥?Five Independent Transistors on a Common Substrate
Applications
鈥?VHF Ampli鏗乪rs
鈥?Multifunction Combinations - RF/Mixer/Oscillator
鈥?Sense Ampli鏗乪rs
鈥?Synchronous Detectors
鈥?VHF Mixers
Ordering Information
PART
NUMBER
(BRAND)
CA3127E
TEMP.
RANGE (
o
C)
-55 to 125
-55 to 125
PKG.
NO.
E16.3
M16.15
PACKAGE
16 Ld PDIP
16 Ld SOIC
鈥?IF Converter
鈥?IF Ampli鏗乪rs
鈥?Synthesizers
鈥?Cascade Ampli鏗乪rs
CA3127M
(3127)
CA3127M96
(3127)
-55 to 125
16 Ld SOIC Tape and Reel M16.15
Pinout
CA3127
(PDIP, SOIC)
TOP VIEW
1
2
Q
2
3
4
Q
1
16
15
14
13
Q
5
12
11
SUBSTRATE
5
6
Q
3
7
8
Q
4
10
9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright 漏 Intersil Corporation 1999
File Number
662.3
5-1
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