INVERTER THYRISTOR
C771
77mm / 2800V / 100us
Type C771 reverse blocking thyristor is suitable for inverter applications.The silicon junction is
manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure.
It is supplied in an industry accepted disc-type package, ready to mount using commercially available
heat dissipators and mechanical clamping hardware.
ON-STATE CHARACTERISTIC
MODEL
30000
On-State Current. It, (A)
10000
C771LS
C771LM
C771LE
C771LD
C771LC
C771LB
C771LA
C771L
process maximum
Tj = 125 C
V
DRM
/ V
RRM
0 to +125
o
C
volts
2800
2700
2600
2500
2400
2300
2200
2100
@
-40
o
C
2700
2600
2500
2400
2300
2200
2100
2000
1000
100
0
1
2
3
4
5
6
7
8
On-State Voltage, Vt (V)
Gate Drive Requirements:
20 - 30V / 10 ohms / 0.5us risetime
10 - 20 us minimum duration
External Clamping Force
7000 - 9000 lbs.
31.1 - 40.0 kN
THERMAL IMPEDANCE
MECHANICAL OUTLINE
J
THERMAL IMPEDANCE vs. ON-TIME
Zthj-c (deg C/W)
C
L
C
L
.02
.01
20擄 鹵5擄
.001
A 脴
B 脴
.0001
Rthj-case(dc) =
.012 degC/watt
D
B 脴
.00001
0.1
1
10
100
1000
10000
On-Time (milliseconds)
A
桅
= 4.35 in (110.5 mm)
B
桅
= 2.88 in (73.2 mm)
D= 1.45 in (36.8 mm)
S
ILICON
P
OWER
CO
RPORATION
175 GREAT VALLEY PKWY. MALVERN, PA 19355
USA
SPEC2:
7/31/96
1
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