4 Micron CMOS Process Family
Features
Process parameters
Process Parameters
4碌m
10 volts
Metal I pitch (width/space)
Metal II pitch (width/space)
Poly pitch (width/space)
Contact
Via
Gate geometry
P-well junction depth
N+ junction depth
P+ junction depth
Gate oxide thickness
Inter poly oxide thick.
4/4
3/4
4/4
4x4
3x3
4.0
5.7
1.5
0.90
640
800
鈥?Double Poly / Double Metal
4碌m
15 volts
4 /4
3/4
4 /4
4x4
3x3
4.0
7.0
1.4
0.95
800
625
碌m
碌m
碌m
碌m
碌m
碌m
碌m
碌m
碌m
脜
脜
Units
鈥?8 碌m Poly and Metal Pitch
鈥?10 Volts Maximum Operating Voltage
鈥?15 Volts High Voltage Option
鈥?Isolated Vertical PNP Bipolar Module
Description
Dalsa Semiconductor鈥檚 4碌m process is a double poly/double
metal CMOS process with an operating voltage range of 5 to 10
volts. In addition, a high voltage option is also available in
which a special drain structure allows the maximum operating
voltage to be increased to 18 volts. No compromises are made
with packing density since all high voltage gates are drawn at
4碌m. Also, an Isolated Vertical PNP bipolar module with good
gain characteristics and high BVceo can be implemented on
both options.
MOSFET Electrical parameters
Electrical
Parameters
4 MICRON - 10 volts
N Channel
min.
typ.
max.
Vt (50x4碌m)
Ids (50x4碌m)
0.4
0.7
32
0.9
P Channel
min.
typ.
max.
0.4
0.7
17
0.9
4 MICRON - 15 volts
N Channel
min.
typ.
max.
0.6
0.9
94
1.2
P Channel
min.
typ.
max.
0.8
1.1
37
1.4
Units
Conditions
V
碌A/碌m
saturation
10V : Vds=Vgs= 3v
15V : Vds=Vgs=7.5v
Body factor
Bvdss
15
0.8
>20
15
0.4
>20
20
1.3
27
20
0.5
22
鈭歷
V
10V : Ids=1碌A
15V : Ids=20nA
Vds=0.1v
Ids = 14 碌A
L drawn = 4碌m
Subthres. slope
Field threshold
L effective
12
114
34
1.6
12
90
25
2.6
18
108
24
1.9
18
80
22
2.6
mV/dec.
V
碌m
www.dalsasemi.com
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l鈥橝茅roport
Bromont, Qu茅bec, Canada
J2L 1S7
Tel :
Fax
email:
(450) 534-2321 ext. 1448
(800) 718-9701
(450) 534-3201
dalsasales@dalsasemi.com
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