鈥?/div>
150 mm wafers.
Description
The Dalsa Semiconductor 3碌m CMOS double poly / double
metal process family offers three operating voltage options. The
standard process has a maximum operating voltage of 7 volts
while the high voltage option allows 11 volts operation. The
third option is aimed at the 3 volts market. It offers low and
matched threshold voltages for improved dynamic range
needed in mixed analog/digital applications.
MOSFET Electrical parameters
3 MICRON - 10 volts
N Channel
min. typ. max.
Vt (50x3碌m)
Ids
(50x3碌m)
Body
factor
(50x50碌m)
Bvdss
Subthres.
Slope
Field thresh.
L effective
12
16
0.6
0.8
82
1.0
P Channel
min. typ. max.
0.6
0.8
36
1.0
3 MICRON - 5 volts
N Channel
min. typ. max.
0.6
0.8
22
1.0
P Channel
min. typ. max.
0.6
0.8
9
1.0
3 MICRON - 3 volts
N Channel
min. typ. max.
0.35 0.50 0.65
42
P Channel
min. typ. max.
0.35 0.50 0.65
17
Units
Conditions
V
碌A(chǔ)/碌m
saturation region
10 V : Vds=Vgs=5v
3&5 V: Vds=Vgs=3v
0.5
21
94
20
2.9
12
16
0.6
18
100
19
2.5
12
10
0.6
16
120
27
2.4
12
10
0.4
18
110
19
2.2
12
10
0.5
16
92
26
2.4
12
10
0.2
14
92
18
2.2
鈭歷
V
mV/
dec
V
碌m
Ids = 1碌A(chǔ)
5v : Vds=0.1v
3v : Vds=3.6v
Ids = 14碌A(chǔ)
L drawn = 3碌m
www.dalsasemi.com
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l鈥橝茅roport
Bromont, Qu茅bec, Canada
J2L 1S7
Tel :
Fax
email:
(450) 534-2321 ext. 1448
(800) 718-9701
(450) 534-3201
dalsasales@dalsasemi.com
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