VISHAY
BZT03..Series
Vishay Semiconductors
Silicon Zener-Diodes with Surge Current Specification
Features
鈥?Glass passivated junction
鈥?Hermetically sealed package
鈥?Clamping time in picoseconds
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
Case:SOD57
Weight:
370 mg (max.500 mg)
Packaging Codes/Options:
TAP / 5 K Ammopack (52 mm tape) / 25 K/box
TR / 5 K 10" reel
949539
Absolute Maximum Ratings
T
amb
= 25 擄C, unless otherwise specified
Parameter
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power t
p
= 100
碌s,
T
j
= 25 擄C
dissipation
Junction temperature
Storage temperature range
Test condition
l = 10 mm, T
L
= 25 擄C
T
amb
= 25 擄C
Symbol
P
V
P
V
P
ZRM
P
ZSM
T
j
T
stg
Value
3.25
1.3
10
600
175
- 65 to + 175
Unit
W
W
W
W
擄C
擄C
Thermal Characteristics
T
amb
= 25 擄C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing 25 mm
Symbol
R
thJA
R
thJA
Value
46
100
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 擄C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 0.5 A
Symbol
V
F
Min
Typ.
Max
1.2
Unit
V
Document Number 85599
Rev. 4, 10-Sep-03
www.vishay.com
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