Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
GENERAL DESCRIPTION
Glass passivated epitaxial rectifier
diodes in a full pack plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times, soft recovery
characteristic and guaranteed reverse
surge and ESD capability. They are
intended for use in switched mode power
supplies and high frequency circuits in
general where low conduction and
switching losses are essential.
BYW29EX series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
F(AV)
t
rr
I
RRM
PARAMETER
BYW29EX-
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
Repetitive peak reverse
current
MAX.
150
150
0.895
8
25
0.2
MAX.
200
200
0.895
8
25
0.2
UNIT
V
V
A
ns
A
PINNING - SOD113
PIN
1
2
DESCRIPTION
cathode
anode
PIN CONFIGURATION
case
SYMBOL
k
1
a
2
case isolated
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
square wave;
未
= 0.5;
T
hs
鈮?/div>
106 藲C
sinusoidal; a = 1.57;
T
hs
鈮?/div>
109 藲C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-150
150
150
150
8
7.3
11.3
16
80
88
32
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
A
A
藲C
藲C
I
F(RMS)
I
FRM
I
FSM
I
2
t
I
RRM
I
RSM
T
stg
T
j
RMS forward current
Repetitive peak forward current t = 25
碌s; 未
= 0.5;
T
hs
鈮?/div>
106 藲C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
I
2
t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
Non-repetitive peak reverse
t
p
= 100
碌s
current
Storage temperature
Operating junction temperature
1
Neglecting switching and reverse current losses
October 1998
1
Rev 1.200
1
2
3
4
5
6
