Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated high efficiency
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
BYV79 series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
F(AV)
t
rr
PARAMETER
BYV79-
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
MAX.
100
100
0.9
14
30
MAX.
150
150
0.9
14
30
MAX.
200
200
0.9
14
30
UNIT
V
V
A
ns
PINNING - TO220AC
PIN
1
2
tab
DESCRIPTION
cathode (k)
anode (a)
cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a
k
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
1
Average forward current
2
square wave;
未
= 0.5;
T
mb
鈮?/div>
120 藲C
sinusoidal; a = 1.57;
T
mb
鈮?/div>
122 藲C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
14
12.7
20
28
150
160
112
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
藲C
藲C
I
F(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
RMS forward current
Repetitive peak forward current t = 25
碌s; 未
= 0.5;
T
mb
鈮?/div>
120 藲C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
I
2
t for fusing
t = 10 ms
Storage temperature
Operating junction temperature
1
T
mb
鈮?/div>
145藲C for thermal stability.
2
Neglecting switching and reverse current losses.
October 1994
1
Rev 1.100
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