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BYV42EX-150 Datasheet

  • BYV42EX-150

  • Rectifier diodes ultrafast, rugged

  • 7頁

  • PHILIPS

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Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
鈥?Low forward volt drop
鈥?Fast switching
鈥?Soft recovery characteristic
鈥?Reverse surge capability
鈥?High thermal cycling performance
鈥?Isolated mounting tab
BYV42F, BYV42EX series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
a1
1
k 2
a2
3
V
F
鈮?/div>
0.9 V
I
O(AV)
= 20 A
I
RRM
= 0.2 A
t
rr
鈮?/div>
28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42F series is supplied in the SOT186 package.
The BYV42EX series is supplied in the SOT186A package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
isolated
SOT186
case
SOT186A
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV42F / BYV42EX
T
hs
鈮?/div>
125藲C
-
-
-
-
-
-
-
-
-
-40
-
MIN.
-150
150
150
150
20
30
150
160
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
藲C
藲C
I
RRM
I
RSM
T
stg
T
j
square wave
未
= 0.5; T
hs
鈮?/div>
78 藲C
t = 25
碌s; 未
= 0.5;
T
hs
鈮?/div>
78 藲C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
碌s
current per diode
Storage temperature
Operating junction temperature
1
Neglecting switching and reverse current losses.
October 1998
1
Rev 1.300

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