Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
GENERAL DESCRIPTION
Glass passivated high efficiency
rugged dual rectifier diodes in a
plastic envelope, featuring low
forward voltage drop, ultra-fast
recovery times and soft recovery
characteristic. These devices can
withstand reverse voltage transients
and have guaranteed reverse surge
and ESD capability. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
BYV42E series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
I
RRM
PARAMETER
BYV42E-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
Repetitive peak reverse
current per diode
MAX.
100
100
0.85
30
28
0.2
MAX.
150
150
0.85
30
28
0.2
MAX.
200
200
0.85
30
28
0.2
UNIT
V
V
A
ns
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a1
a2
k
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
1
Output current (both diodes
conducting)
2
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
square wave
未
= 0.5; T
mb
鈮?/div>
108 藲C
sinusoidal
a = 1.57; T
mb
鈮?/div>
111 藲C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
30
27
43
30
150
160
112
0.2
0.2
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
A
A
藲C
藲C
I
O(RMS)
I
FRM
I
FSM
I
2
t
I
RRM
I
RSM
T
stg
T
j
t = 25
碌s; 未
= 0.5;
T
mb
鈮?/div>
108 藲C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
I
2
t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
碌s; 未
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
碌s
current per diode
Storage temperature
Operating junction temperature
1 T
mb
鈮?/div>
144藲C for thermal stability.
2 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
October 1994
1
Rev 1.100
1
2
3
4
5
6
